11 results
Improved performance of GaSb-based MIR photodetectors through electrochemical passivation in sulphur containing solutions
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 829 / 2004
- Published online by Cambridge University Press:
- 26 February 2011, B6.8
- Print publication:
- 2004
-
- Article
- Export citation
Thermally stable transparent Ru-Si-O Schottky contacts for n-type GaN and AlGaN
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 831 / 2004
- Published online by Cambridge University Press:
- 01 February 2011, E3.41
- Print publication:
- 2004
-
- Article
- Export citation
p-type in ZnO:N by codoping with Cr
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 786 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, E6.1
- Print publication:
- 2003
-
- Article
- Export citation
Engineering ZnO/GaN Interfaces for Tunneling Ohmic Contacts to GaN
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 747 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, V6.7
- Print publication:
- 2002
-
- Article
- Export citation
Stable Ohmic Contacts on GaAs and GaN Devices for High Temperatures
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 743 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, L11.57
- Print publication:
- 2002
-
- Article
- Export citation
Transparent ZnO-Based Ohmic Contact to p-GaN
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I13.1.1
- Print publication:
- 2001
-
- Article
- Export citation
Zirconium Mediated Hydrogen Outdiffusion From p-GaN
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 570-576
- Print publication:
- 2000
-
- Article
-
- You have access
- HTML
- Export citation
Ni/Si-Based Contacts to GaN: Thermally Activated Structural Transformations Leading to Ohmic Behavior
-
- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 864-869
- Print publication:
- 1999
-
- Article
-
- You have access
- HTML
- Export citation
Zirconium Mediated Hydrogen Outdiffusion from p-GaN
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W10.9
- Print publication:
- 1999
-
- Article
- Export citation
Advanced GaSb/InGaAsSb/AlGaAsSb 2-2.4µm Photovoltaic Detectors
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 607 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 89
- Print publication:
- 1999
-
- Article
- Export citation
Ni/Si-Based Contacts to GaN: Thermally Activated Structural Transformations Leading to Ohmic Behavior
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G9.9
- Print publication:
- 1998
-
- Article
- Export citation